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 1996 Mar 19 3 Philips Semiconductors Product speci?cation Schottky barrier (double) diodes BAT54W series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ELECTRICAL CHARACTERISTICS Tamb =25°C unless otherwise speci?ed. Note 1. Pulsed test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOT323 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage ? 30 V IF continuous forward current ? 200 mA IFRM repetitive peak forward current tp ≤ 1s;δ≤ 0.5 ? 300 mA IFSM non-repetitive peak forward current tp < 10 ms ? 600 mA Ptot total power dissipation (per package) Tamb ≤ 25 °C ? 200 mW Tstg storage temperature ?65 +150 °C Tj junction temperature ? 125 °C Tamb operating ambient temperature ?65 +125 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF forward voltage see Fig.6 IF = 0.1 mA 240 mV IF = 1mA 320 mV IF =10mA 400 mV IF =30mA 500 mV IF = 100 mA 800 mV IR reverse current VR = 25 V; note 1; see Fig.7 2 μA trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA: see Fig.9 5ns Cddiode capacitance f = 1 MHz; VR = 1 V; see Fig.8 10 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 625 K/W |